A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel
Autor: | Wang, Min, Ke, Dao-Ming ⁎, Xu, Chun-Xia, Wang, Bao-Tong |
---|---|
Zdroj: | In Solid State Electronics February 2014 92:35-39 |
Databáze: | ScienceDirect |
Externí odkaz: |