Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
| Autor: | Sato-Iwanaga, Junko, Inoue, Akira, Sorada, Haruyuki, Takagi, Takeshi, Rothschild, Aude, Loo, Roger, Biesemans, Serge, Ito, Choshu, Liu, Yang, Dutton, Robert W., Tsuchiya, Hideaki |
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| Zdroj: | In Solid State Electronics January 2014 91:1-8 |
| Databáze: | ScienceDirect |
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