Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
| Autor: | Flachowsky, S., Herrmann, T., Höntschel, J., Illgen, R., Ong, S.Y., Wiatr, M. |
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| Zdroj: | In Solid State Electronics October 2013 88:27-31 |
| Databáze: | ScienceDirect |
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