Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
| Autor: | Conzatti, F., Pala, M.G., Esseni, D., Bano, E. |
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| Zdroj: | In Solid State Electronics October 2013 88:49-53 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Conzatti, F., Pala, M.G., Esseni, D., Bano, E. |
|---|---|
| Zdroj: | In Solid State Electronics October 2013 88:49-53 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect