A pragmatic design methodology using proper isolation and doping for bulk FinFETs
Autor: | Liao, Yi-Bo a, Chiang, Meng-Hsueh b, ⁎, Lai, Yu-Sheng c, Hsu, Wei-Chou a, ⁎ |
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Zdroj: | In Solid State Electronics July 2013 85:48-53 |
Databáze: | ScienceDirect |
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