A pragmatic design methodology using proper isolation and doping for bulk FinFETs

Autor: Liao, Yi-Bo a, Chiang, Meng-Hsueh b, ⁎, Lai, Yu-Sheng c, Hsu, Wei-Chou a, ⁎
Zdroj: In Solid State Electronics July 2013 85:48-53
Databáze: ScienceDirect