Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks

Autor: Morita, Yukinori, Migita, Shinji, Mizubayashi, Wataru, Masahara, Meishoku, Ota, Hiroyuki
Zdroj: In Solid State Electronics June 2013 84:58-64
Databáze: ScienceDirect