Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions
| Autor: | Sakic, Agata, Qi, Lin, Scholtes, Tom L.M., van der Cingel, Johan, Nanver, Lis K. |
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| Zdroj: | In Solid State Electronics June 2013 84:65-73 |
| Databáze: | ScienceDirect |
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