Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Autor: Hartmann, J.M., Benevent, V., Barnes, J.P., Veillerot, M., Lafond, D., Damlencourt, J.F., Morvan, S., Prévitali, B., Andrieu, F., Loubet, N., Dutartre, D.
Zdroj: In Solid State Electronics May 2013 83:10-17
Databáze: ScienceDirect