Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Autor: Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.
Zdroj: In Solid State Electronics May 2013 83:50-55
Databáze: ScienceDirect