Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

Autor: Deleruyelle, D., Putero, M., Ouled-Khachroum, T., Bocquet, M., Coulet, M.-V., Boddaert, X., Calmes, C., Muller, C.
Zdroj: In Solid State Electronics January 2013 79:159-165
Databáze: ScienceDirect