Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
Autor: | Deleruyelle, D., Putero, M., Ouled-Khachroum, T., Bocquet, M., Coulet, M.-V., Boddaert, X., Calmes, C., Muller, C. |
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Zdroj: | In Solid State Electronics January 2013 79:159-165 |
Databáze: | ScienceDirect |
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