Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
| Autor: | Birafane, A., Aflaki, P., Kouki, A.B., Ghannouchi, F.M. |
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| Zdroj: | In Solid State Electronics October 2012 76:77-83 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Birafane, A., Aflaki, P., Kouki, A.B., Ghannouchi, F.M. |
|---|---|
| Zdroj: | In Solid State Electronics October 2012 76:77-83 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect