Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Autor:	Li, Yiming, Cheng, Hui-Wen
Zdroj:	In Solid State Electronics November 2012 77:12-19
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect