Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications
| Autor: | Wessely, F., Krauss, T., Schwalke, U. |
|---|---|
| Zdroj: | In Solid State Electronics August 2012 74:91-96 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect