Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
| Autor: | Fenouillet-Beranger, C., Perreau, P., Boulenc, P., Tosti, L., Barnola, S., Andrieu, F., Weber, O., Beneyton, R., Perrot, C., de Buttet, C., Abbate, F., Campidelli, Y., Pinzelli, L., Gouraud, P., Margain, A., Peru, S., Bourdelle, K.K., Nguyen, B.Y., Boedt, F., Poiroux, T., Faynot, O., Skotnicki, T., Boeuf, F. |
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| Zdroj: | In Solid State Electronics August 2012 74:32-37 |
| Databáze: | ScienceDirect |
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