Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition
| Autor: | Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, O’uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku |
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| Zdroj: | In Solid State Electronics August 2012 74:13-18 |
| Databáze: | ScienceDirect |
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