AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric
| Autor: | Lee, K.H., Chang, P.C., Chang, S.J., Su, Y.K. |
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| Zdroj: | In Solid State Electronics June 2012 72:38-43 |
| Databáze: | ScienceDirect |
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