Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region
| Autor: | Cortés, I., Toulon, G., Morancho, F., Flores, D., Hugonnard-Bruyère, E., Villard, B. |
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| Zdroj: | In Solid State Electronics April 2012 70:8-13 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect