Study of annealing temperature influence on the performance of top gated graphene/SiC transistors
| Autor: | Clavel, M., Poiroux, T., Mouis, M., Becerra, L., Thomassin, J.L., Zenasni, A., Lapertot, G., Rouchon, D., Lafond, D., Faynot, O. |
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| Zdroj: | In Solid State Electronics May 2012 71:2-6 |
| Databáze: | ScienceDirect |
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