Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implants

Autor: Mezzomo, Cecilia M., Bajolet, Aurélie, Cathignol, Augustin, Ghibaudo, Gérard
Zdroj: In Solid State Electronics November-December 2011 65-66:163-169
Databáze: ScienceDirect