Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implants
Autor: | Mezzomo, Cecilia M., Bajolet, Aurélie, Cathignol, Augustin, Ghibaudo, Gérard |
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Zdroj: | In Solid State Electronics November-December 2011 65-66:163-169 |
Databáze: | ScienceDirect |
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