Grain boundary-driven leakage path formation in HfO2 dielectrics

Autor: Bersuker, G., Yum, J., Vandelli, L., Padovani, A., Larcher, L., Iglesias, V., Porti, M., Nafría, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R.
Zdroj: In Solid State Electronics November-December 2011 65-66:146-150
Databáze: ScienceDirect