Grain boundary-driven leakage path formation in HfO2 dielectrics
Autor: | Bersuker, G., Yum, J., Vandelli, L., Padovani, A., Larcher, L., Iglesias, V., Porti, M., Nafría, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R. |
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Zdroj: | In Solid State Electronics November-December 2011 65-66:146-150 |
Databáze: | ScienceDirect |
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