Carbon-doped GeTe: A promising material for Phase-Change Memories

Autor:	Betti Beneventi, G., Perniola, L., Sousa, V., Gourvest, E., Maitrejean, S., Bastien, J.C., Bastard, A., Hyot, B., Fargeix, A., Jahan, C., Nodin, J.F., Persico, A., Fantini, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Zuliani, P., Boulanger, F.
Zdroj:	In Solid State Electronics November-December 2011 65-66:197-204
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect