Design and optimization of high voltage LDMOS transistors on 0.18 μm SOI CMOS technology

Autor: Toulon, G., Cortés, I., Morancho, F., Hugonnard-Bruyère, E., Villard, B., Toren, W.J.
Zdroj: In Solid State Electronics 2011 61(1):111-115
Databáze: ScienceDirect