Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
| Autor: | Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M. |
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| Zdroj: | In Solid State Electronics 2011 60(1):116-121 |
| Databáze: | ScienceDirect |
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