Formation of Ni(Ge 1−xSn x) layers with solid-phase reaction in Ni/Ge 1−xSn x/Ge systems
| Autor: | Nishimura, Tsuyoshi, Nakatsuka, Osamu, Shimura, Yosuke, Takeuchi, Shotaro, Vincent, Benjamin, Vantomme, Andre, Dekoster, Johan, Caymax, Matty, Loo, Roger, Zaima, Shigeaki |
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| Zdroj: | In Solid State Electronics 2011 60(1):46-52 |
| Databáze: | ScienceDirect |
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