Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge- nMOSFETs
Autor: | Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu |
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Zdroj: | In Solid State Electronics 2011 60(1):89-92 |
Databáze: | ScienceDirect |
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