Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge- nMOSFETs

Autor: Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu
Zdroj: In Solid State Electronics 2011 60(1):89-92
Databáze: ScienceDirect