Ge 1−xSn x stressors for strained-Ge CMOS
| Autor: | Takeuchi, S., Shimura, Y., Nishimura, T., Vincent, B., Eneman, G., Clarysse, T., Demeulemeester, J., Vantomme, A., Dekoster, J., Caymax, M., Loo, R., Sakai, A., Nakatsuka, O., Zaima, S. |
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| Zdroj: | In Solid State Electronics 2011 60(1):53-57 |
| Databáze: | ScienceDirect |
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