Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Autor: Kilchytska, V., Alvarado, J., Collaert, N., Rooyackers, R., Put, S., Simoen, E., Claeys, C., Flandre, D.
Zdroj: In Solid State Electronics 2011 59(1):18-24
Databáze: ScienceDirect