Investigation of charge-trap memories with AlN based band engineered storage layers

Autor: Molas, G., Colonna, J.P., Kies, R., Belhachemi, D., Bocquet, M., Gély, M., Vidal, V., Brianceau, P., Martinez, E., Papon, A.M., Licitra, C., Vandroux, L., Ghibaudo, G., De Salvo, B.
Zdroj: In Solid State Electronics 2011 58(1):68-74
Databáze: ScienceDirect