Investigation of charge-trap memories with AlN based band engineered storage layers
Autor: | Molas, G., Colonna, J.P., Kies, R., Belhachemi, D., Bocquet, M., Gély, M., Vidal, V., Brianceau, P., Martinez, E., Papon, A.M., Licitra, C., Vandroux, L., Ghibaudo, G., De Salvo, B. |
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Zdroj: | In Solid State Electronics 2011 58(1):68-74 |
Databáze: | ScienceDirect |
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