Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs
| Autor: | Jousseaume, V., Fantini, A., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Gonon, P., Vallée, C., Perniola, L., De Salvo, B. |
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| Zdroj: | In Solid State Electronics 2011 58(1):62-67 |
| Databáze: | ScienceDirect |
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