Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications
| Autor: | Ullán, M., Díez, S., Lozano, M., Pellegrini, G., Knoll, D., Heinemann, B. |
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| Zdroj: | In Solid State Electronics February 2011 56(1):179-184 |
| Databáze: | ScienceDirect |
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