In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation
| Autor: | Grandchamp, B., Jaud, M.-A., Scheiblin, P., Romanjek, K., Hutin, L., Le Royer, C., Vinet, M. |
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| Zdroj: | In Solid State Electronics 2011 57(1):67-72 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect