Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances

Autor: Gerardi, C., Tripiciano, E., Cinà, G., Lombardo, S., Garozzo, C., Corso, D., Betrò, G., Pace, C., Crupi, F.
Zdroj: In Solid State Electronics 2010 54(11):1319-1325
Databáze: ScienceDirect