Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers
| Autor: | Chu, L.K., Chu, R.L., Lin, T.D., Lee, W.C., Lin, C.A., Huang, M.L., Lee, Y.J., Kwo, J., Hong, M. |
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| Zdroj: | In Solid State Electronics 2010 54(9):965-971 |
| Databáze: | ScienceDirect |
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