E-beam-evaporated Al 2O 3 for InAs/AlSb metal–oxide–semiconductor HEMT development
| Autor: | Lin, H.-K., Fan, D.-W., Lin, Y.-C., Chiu, P.-C., Chien, C.-Y., Li, P.-W., Chyi, J.-I., Ko, C.-H., Kuan, T.-M., Hsieh, M.-K., Lee, W.-C., Wann, C.H. |
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| Zdroj: | In Solid State Electronics 2010 54(5):505-508 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect