Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
| Autor: | Pham-Nguyen, L., Fenouillet-Beranger, C., Ghibaudo, G., Skotnicki, T., Cristoloveanu, S. |
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| Zdroj: | In Solid State Electronics February 2010 54(2):123-130 |
| Databáze: | ScienceDirect |
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