Transient activation model for antimony in relaxed and strained silicon
| Autor: | Lai, Y., Bennett, N.S., Ahn, C., Cowern, N.E.B., Cordero, N., Greer, J.C. |
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| Zdroj: | In Solid State Electronics 2009 53(11):1173-1176 |
| Databáze: | ScienceDirect |
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| Autor: | Lai, Y., Bennett, N.S., Ahn, C., Cowern, N.E.B., Cordero, N., Greer, J.C. |
|---|---|
| Zdroj: | In Solid State Electronics 2009 53(11):1173-1176 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect