1/ f noise study on strained Si 0.8Ge 0.2 p-channel MOSFETs with high-k/poly Si gate stack
| Autor: | Yan, L., Simoen, E., Olsen, S.H., Akheyar, A., Claeys, C., O’Neill, A.G. |
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| Zdroj: | In Solid State Electronics 2009 53(11):1177-1182 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect