Drain current model for nanoscale double-gate MOSFETs

Autor: Hariharan, Venkatnarayan, Thakker, Rajesh, Singh, Karmvir, Sachid, Angada B., Patil, M.B., Vasi, Juzer, Rao, V. Ramgopal
Zdroj: In Solid State Electronics 2009 53(9):1001-1008
Databáze: ScienceDirect