Impact of a HTO/Al 2O 3 bi-layer blocking oxide in nitride-trap non-volatile memories
| Autor: | Bocquet, M., Molas, G., Perniola, L., Garros, X., Buckley, J., Gély, M., Colonna, J.P., Grampeix, H., Martin, F., Vidal, V., Toffoli, A., Deleonibus, S., Ghibaudo, G., Pananakakis, G., De Salvo, B. |
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| Zdroj: | In Solid State Electronics 2009 53(7):786-791 |
| Databáze: | ScienceDirect |
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