Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi- Vt CMOS application
| Autor: | Matsukawa, Takashi, Endo, Kazuhiko, Liu, Yongxun, O’uchi, Shinichi, Ishikawa, Yuki, Yamauchi, Hiromi, Tsukada, Junichi, Ishii, Kenichi, Sakamoto, Kunihiro, Suzuki, Eiichi, Masahara, Meishoku |
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| Zdroj: | In Solid State Electronics 2009 53(7):701-705 |
| Databáze: | ScienceDirect |
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