InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material
| Autor: | Champlain, James G., Magno, Richard, Ancona, Mario, Newman, Harvey S., Brad Boos, J. |
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| Zdroj: | In Solid State Electronics November 2008 52(11):1829-1832 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect