Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency
| Autor: | Aggarwal, Ruchika a, Agrawal, Anju b, Gupta, Mridula a, Gupta, R.S. a, ⁎ |
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| Zdroj: | In Solid State Electronics 2008 52(10):1610-1614 |
| Databáze: | ScienceDirect |
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