Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
| Autor: | Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O′Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M., Hoffmann, T., Absil, P., Jurczak, M., Biesemans, S. |
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| Zdroj: | In Solid State Electronics September 2008 52(9):1303-1311 |
| Databáze: | ScienceDirect |
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