Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

Autor: Seo, Seung-Hwan, Kim, Se-Woon, Lee, Jang-Uk, Kang, Gu-Cheol, Roh, Kang-Seob, Kim, Kwan-Young, Lee, Soon-Young, Choi, Chang-Min, Song, Kwan-Jae, Park, So-Ra, Park, Jun-Hyun, Jeon, Ki-Chan, Kim, Dong Myong, Kim, Dae Hwan, Shin, Hyungcheol, Lee, Jong Duk, Park, Byung-Gook
Zdroj: In Solid State Electronics June 2008 52(6):844-848
Databáze: ScienceDirect
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