On the electron mobility enhancement in biaxially strained Si MOSFETs
| Autor: | Driussi, F., Esseni, D., Selmi, L., Hellström, P.-E., Malm, G., Ha˚llstedt, J., Östling, M., Grasby, T.J., Leadley, D.R., Mescot, X. |
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| Zdroj: | In Solid State Electronics 2008 52(4):498-505 |
| Databáze: | ScienceDirect |
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