Physics-based 1/ f noise model for MOSFETs with nitrided high- κ gate dielectrics
| Autor: | Morshed, Tanvir Hasan, Devireddy, Siva Prasad, Çelik-Butler, Zeynep, Shanware, Ajit, Green, Keith, Chambers, J.J., Visokay, M.R., Colombo, Luigi |
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| Zdroj: | In Solid State Electronics 2008 52(5):711-724 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect