An EKV-based high voltage MOSFET model with improved mobility and drift model
| Autor: | Chauhan, Yogesh Singh, Gillon, Renaud, Bakeroot, Benoit, Krummenacher, Francois, Declercq, Michel, Ionescu, Adrian Mihai |
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| Zdroj: | In Solid State Electronics 2007 51(11):1581-1588 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect