250 °C operation normally-off GaN MOSFETs
| Autor: | Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh |
|---|---|
| Zdroj: | In Solid State Electronics 2007 51(5):784-787 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
| Autor: | Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh |
|---|---|
| Zdroj: | In Solid State Electronics 2007 51(5):784-787 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect