Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate Double-Gate transistors
Autor: | Barral, Vincent, Poiroux, T., Vinet, M., Widiez, J., Previtali, B., Grosgeorges, P., Le Carval, G., Barraud, S., Autran, J.L., Munteanu, D., Deleonibus, S. |
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Zdroj: | In Solid State Electronics 2007 51(4):537-542 |
Databáze: | ScienceDirect |
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