Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate Double-Gate transistors

Autor: Barral, Vincent, Poiroux, T., Vinet, M., Widiez, J., Previtali, B., Grosgeorges, P., Le Carval, G., Barraud, S., Autran, J.L., Munteanu, D., Deleonibus, S.
Zdroj: In Solid State Electronics 2007 51(4):537-542
Databáze: ScienceDirect