Device structures and carrier transport properties of advanced CMOS using high mobility channels

Autor: Takagi, S., Tezuka, T., Irisawa, T., Nakaharai, S., Numata, T., Usuda, K., Sugiyama, N., Shichijo, M., Nakane, R., Sugahara, S.
Zdroj: In Solid State Electronics 2007 51(4):526-536
Databáze: ScienceDirect